Dislocation density-dependent photorefractive effect in (001)-cut GaAs

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Effect of Iso-Electronic GaAs Dopants on the Dislocation Density of

The addition of 1% In to LEC GaAs has been reported to reduce the dislocation density in this material; similar data exists for Sb doping. Several effects have been inferred to explain these phenomena, the most prevailing one stating that the solid stoichiometry is affected by an as yet unknown mechanism. Similar postulations have been made to explain the growth of semi-insulating GaAs. A therm...

مطالعه قطبش اسپینی و خواص الکترونی پیوندگاههای(001) Co2MnSi/GaAs

Monte Carlo Simulation of Gaas(001) Homoepitaxy

By carrying out Monte Carlo simulations based on the two-species atomic-scale kinetic growth model of GaAs(001) homoepitaxy and comparing the results with scanning tunneling microscope images, we show that initial growing islands undergo the structural transformation before adopting the proper β2(2 × 4) reconstruction. In developing optoelectronic devices, GaAs(001) is often used as the basis s...

Photorefractive effect and optical damage thresholds in z-cut swift heavy ion irradiation LiNbO3 waveguides

We have investigated the photorefractive effect and the corresponding optical damage thresholds of novel LiNbO3 waveguides fabricated by swift-ion irradiation. TEand TM-mode operation has been characterized and the influence of the beam propagation length analysed. The results are briefly discussed and compared with some data from other type of LiNbO3 waveguides.